• HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS

HHVS50-3G Heatsink High Voltage Silicon Stack 50KV 3A 100nS

Products Main features:
1、Nut connection electrode and fixing.
2、Special Plastic case body, Epoxy filled.
3、Fast reverse recovery time for high efficiency.
4、Copper radiator structure ensures good heat dissipation effect.
5、Low internal resistance reduces energy loss.
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  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
  • HHVS50-3G Heatsink High Voltage Silicon Stack  50KV 3A  100nS
Desciption
HHVS50-3G Heatsink High Voltage Silicon Stack  Data Sheet
 Parameter Symbol Unit Test Conditions Value
 Repetitive Peak Backward Voltage Vrrm KV Ta=25℃  Ir=2.0μA 50
 Peak Working Backward Voltage Vrwm KV Ta=25℃  Ir=2.0μA 50
 Average Forward Current If(AV) A 50Hz Half-sine Wave , Resistance load @Tbreak=50℃ 3.0
 Backward Recovery Time Trr nS   100
 Surge Forward Current Ifsm A 0.01S @ Half-Sine wave  50Hz 100
 Junction Temperature(MAX) Ta   -40~+175
 Storage Temperature Tstg   -40~+150
 Forward Peak Voltage Vfm V   ≥65.0
 Backward Peak  Current Irrm1 μA @ Ta=25℃ VRM=VRRM 2
Irrm2 μA @ Ta=100℃ VRM=VRRM 20.0
 Absolute Maximum Ratings & Electrical Characteristics
HVDIODE - Suly Electronics Co., Ltd.
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